CPH5517 no. 8205-1/8 62012 tkim/21505 tsim tb-00001151 http:// semicon.sanyo.com/en/network ordering number : en8205a applications ? relay drivers, lamp drivers, motor drivers features ? composite type with a pnp/npn transistor contained in package, facilitating high-density mounting ? the CPH5517 consists of two chips which are equivalent to the cph3116 and the cph3216, respectively ? ultrasmall package permitting applied sets to be small and slime (mounting height : 0.9mm) speci cations ( ): pnp absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--50)60 v collector-to-emitter voltage v ceo (--)50 v emitter-to-base voltage v ebo (--)5 v collector current i c (--)1.0 a collector current (pulse) i cp (--)3 a base current i b (--)200 ma collector dissipation p c mounted on a ceramic board (600mm 2 0.8mm) 1unit 0.9 w junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7017a-008 CPH5517 pnp/npn epitaxial planar silicon transistors high-current switching applications product & package information ? package : cph5 ? jeita, jedec : sc-74a, sot-25 ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection em lot no. tl 543 12 sanyo semiconductors data sheet 1 : collector1 2 : collector2 3 : emitter2 4 : base common 5 : emitter1 sanyo : cph5 2 1 4 53 2.9 0.05 0.4 2.8 1.6 0.2 0.6 0.6 0.9 0.2 0.15 0.95 CPH5517-tl-e
CPH5517 no. 8205-2/8 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =(--)40v, i e =0a (--)0.1 a emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)0.1 a dc current gain h fe v ce =(--)2v, i c =(--)100ma 200 560 gain-bandwidth product f t v ce =(--)10v, i c =(--)300ma 420 mhz output capacitance cob v cb =(--)10v, f=1mhz (9)6 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)500ma, i b =(--)10ma (--280) (--430) mv 130 190 mv i c =(--)300ma, i b =(--)6ma (--145) (--220) mv 90 135 mv base-to-emitter saturation voltage v be (sat) i c =(--)500ma, i b =(--)10ma (--)0.81 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 a, i e =0a (--50)60 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)50 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 a, i c =0a (--)5 v turn-on time t on see speci ed test circuit. (36)38 ns storage time t stg (173)332 ns fall time t f (28)40 ns switching time test circuit ordering information device package shipping memo CPH5517-tl-e cph5 3,000pcs./reel pb free + + 50 input outpu t v r r b 24 v cc =25v 100 f 470 f v be = --5v pw=20 s i b1 i b2 dc 1% for pnp, the polarit y is reversed. 20i b1 = --20i b2 = i c =500ma
CPH5517 no. 8205-3/8 50ma --1000 --800 --600 --400 --200 0 i c -- v ce 0 --0.2 --0.4 --0.6 --0.8 --1.0 i b =0ma collector-to-emitter voltage, v ce -- v collector current, i c -- m a 1000 800 600 400 200 0 i c -- v ce 0 0.2 0.4 0.6 0.8 1.0 collector-to-emitter voltage, v ce -- v collector current, i c -- m a --4ma --10ma --8ma --6ma --30ma --20ma --40ma --50ma 10ma 8ma 6ma 4ma 2ma i b =0ma 30ma 20ma 40ma --2ma it01643 it01644 [pnp] [npn] it01647 it01649 it01648 it01650 2 10 3 5 7 2 3 5 7 100 1000 h fe -- i c dc current gain, h fe collector current, i c -- a ta=75 c --25 c v ce = --2v 25 c h fe -- i c dc current gain, h fe collector current, i c -- a ta=75 c --25 c v ce =2v 25 c 2 3 5 7 100 2 3 2 3 5 5 7 1000 f t -- i c gain-bandwidth product, f t -- mhz collector current, i c -- a 2 3 2 3 5 5 7 1000 2 3 5 7 100 f t -- i c gain-bandwidth product, f t -- mhz collector current, i c -- a 23 57 23 57 23 --0.01 --0.1 --1.0 23 23 3 57 2 57 --0.01 --0.1 --1.0 23 57 0.1 0.01 23 3 57 1.0 2 v ce =10v 2 3 5 7 100 2 3 5 7 1000 10 23 57 0.1 23 57 1.0 23 0.01 v ce = --10v --1.0 --0.9 --0.8 --0.7 --0.6 --0.4 --0.3 --0.2 --0.1 0 --0.5 i c -- v be collector current, i c -- a 25 c --25 c ta=75 c base-to-emitter voltage, v be -- v v ce = --2v i c -- v be collector current, i c -- a base-to-emitter voltage, v be -- v 25 c --25 c ta=75 c v ce =2v 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 it01645 it01646 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 [pnp] [npn] [pnp] [npn] [pnp] [npn]
CPH5517 no. 8205-4/8 collector-to-base voltage, v cb -- v cob -- v cb output capacitance, cob -- pf 2 3 5 7 10 2 3 5 7 100 7 --0.1 23 5 57 --1.0 23 57 --10 23 57 --100 f=1mhz collector-to-base voltage, v cb -- v cob -- v cb output capacitance, cob -- pf 7 0.1 23 5 57 1.0 23 57 10 23 57 100 2 3 5 7 10 2 3 5 7 100 f=1mhz it01651 it01652 [pnp] [npn] v ce (sat) -- i c collector current, i c -- a --25 c i c / i b =50 ta=75 c v ce (sat) -- i c collector current, i c -- a i c / i b =50 --25 c ta=75 c v be (sat) -- i c collector current, i c -- a i c / i b =50 ta= --25 c 75 c 25 c v be (sat) -- i c collector current, i c -- a i c / i b =50 ta= --25 c 75 c 25 c 2 3 5 7 2 3 5 7 --0.01 --0.01 --0.1 23 57 --1.0 2 357 --0.1 --1.0 it01655 it01657 it01656 it01658 7 --10 5 3 2 7 --1.0 --0.1 --0.01 23 57 --0.1 23 57 --1.0 5 3 2 7 5 3 2 10 7 5 3 2 0.1 0.1 0.01 23 57 1.0 23 57 1.0 1.0 7 5 3 2 0.1 0.01 0.01 23 57 0.1 23 57 1.0 7 5 3 2 25 c 25 c v ce (sat) -- i c collector current, i c -- a --25 c ta=75 c i c / i b =20 v ce (sat) -- i c collector current, i c -- a i c / i b =20 --25 c ta=75 c it01653 it01654 7 5 3 2 --1.0 --0.1 7 5 3 2 23 57 --0.1 --0.01 23 57 --1.0 --0.01 1.0 7 5 3 2 7 5 3 2 0.1 0.01 0.01 23 57 0.1 1.0 23 57 25 c 25 c collector-to-emitter saturation voltage, v ce (sat) -- v collector-to-emitter saturation voltage, v ce (sat) -- v collector-to-emitter saturation voltage, v ce (sat) -- v collector-to-emitter saturation voltage, v ce (sat) -- v base-to-emitter saturation voltage, v be (sat) -- v base-to-emitter saturation voltage, v be (sat) -- v [pnp] [npn] [pnp] [npn] [pnp] [npn]
CPH5517 no. 8205-5/8 2 2 3 3 5 7 5 1.0 2 3 5 7 0.1 0.01 1.0 2 0.1 23 57 10 2 357 357 it09272 i cp =3a i c =1a 500 s 100ms dc operation 1ms 10ms 100 s 1.4 1.2 1.0 0.9 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 p c -- ta collector dissipation, p c -- w ambient temperature, ta -- c it01660 mounted on a ceramic board (600mm 2 0.8mm) 1unit [pnp / npn] collector-to-emitter voltage, v ce -- v a s o collector current, i c -- a ta=25c single pulse mounted on a ceramic board (600mm 2 0.8mm) for pnp, minus sign is omitted [pnp / npn]
CPH5517 no. 8205-6/8 embossed taping speci cation CPH5517-tl-e
CPH5517 no. 8205-7/8 outline drawing land pattern example CPH5517-tl-e mass (g) unit 0.02 * for reference mm unit: mm 0.6 2.4 1.4 0.95 0.95
CPH5517 ps no. 8205-8/8 this catalog provides information as of june, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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